field - effect transistors造句
例句与造句
- semiconductor discrete devices . detail specification for type cs3684 cs3687 silicon n-channel junction mode field-effect transistors
半导体分立器件.cs3684cs3687型硅n沟道结型场效应晶体管详细规范 - semiconductor discrete devices . detail specification for type cs3458 cs3460 silicon n-channel junction mode field-effect transistors
半导体分立器件.cs3458cs3460型硅n沟道结型场效应晶体管详细规范 - semiconductor discrete device . detail specification for type cs5114 cs5116 silicon p-channel deplition mode field-effect transistor
半导体分立器件.cs5114cs5116型硅p沟道耗尽型场效应晶体管详细规范 - semiconductor discrete device . detail specification for type cs4091 cs4093 silicon n-channel deplition mode field-effect transistor
半导体分立器件.cs4091cs4093型硅n沟道耗尽型场效应晶体管详细规范 - semiconductor discrete device . detail specification for types cs4856 cs4861 silicon n-channel deplition mode field-effect transistor
半导体分立器件.cs4856cs4861型硅n沟道耗尽型场效应晶体管详细规范 - It's difficult to find field - effect transistors in a sentence. 用field - effect transistors造句挺难的
- semiconductor discrete device . detail specification for type cs6760 and cs6762 silicon n-channel enhacement mode field-effect transistor
半导体分立器件.cs6760和cs6762型硅n沟道增强型场效应晶体管详细规范 - specification for harmonized system of quality assessment for electronic components-blank detail specification : single gate field-effect transistors
电子元器件质量评定协调体系规范.空白详细规范.单栅场效应晶体管 - mosfets discrete semiconductor devices-part 8-4 : metal-oxide-semiconductor field-effect transistors mosfets for power switching applications
半导体分立器件.第8-4部分:电力开关装置用金属氧化物半导体场效应晶体管 - semiconductor discrete device . detail specification for silicon n-channel deplition mode field-effect transistor of type cs1 gp, gt and gct classes
半导体分立器件gpgt和gct级cs1型硅n沟道耗尽型场效应晶体管.详细规范 - semiconductor discrete device . detail specification for silicon n-channel deplition mode field-effect transistor of type cs4 . gp, gt and gct classes
半导体分立器件gpgt和gct级cs4型硅n沟道耗尽型场效应晶体管.详细规范 - semiconductor discrete device . detail specification for silicon n-channel deplition mode field-effect transistor of type cs10 . gp, gt and gct classes
半导体分立器件gpgt和gct级cs10型硅n沟道耗尽型场效应晶体管.详细规范 - modern voltage references are constructed using the energy-band-gap voltage of integrated transistors, buried zener diodes, and junction field-effect transistors
现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极管和结场效应晶体管。 - among them, the control unit of the primary and subordinate cpu structure has very high precision of control, takes the power field-effect transistor as the power device
)其中，主从cpu结构的控制单元具有很高的控制精度；采用了功率场效应管作为功率器件。 - semiconductor devices-discret devices . part 8 : field-effect transistors . blank detail specification for single-gate field-effect transistors, up to 5 w and 1 ghz
半导体器件.分立器件.第8部分:场效应晶体管.第1节:1ghz5w以下的单栅极场效应晶体管的空白详细规范 - semiconductor devices-discret devices . part 8 : field-effect transistors . blank detail specification for single-gate field-effect transistors, up to 5 w and 1 ghz
半导体器件.分立器件.第8部分:场效应晶体管.第1节:1ghz5w以下的单栅极场效应晶体管的空白详细规范
